High Mobility and Stability of Thin-Film Transistors Using Silicon-Doped Amorphous Indium Tin Oxide Semiconductors
- Title
- High Mobility and Stability of Thin-Film Transistors Using Silicon-Doped Amorphous Indium Tin Oxide Semiconductors
- Author
- 박진성
- Keywords
- Silicon-doped InSnO; thin-film transistor; oxide semiconductor; high mobility; stability; GE
- Issue Date
- 2014-06
- Publisher
- SPRINGER, 233 SPRING ST, NEW YORK, NY 10013 USA
- Citation
- Journal of electronic materials, Vol.43 No.9 [2014], p 3177-3183
- Abstract
- We report the fabrication of high-performance thin-film transistors (TFTs) with an amorphous silicon indium tin oxide (a-SITO) channel, which was deposited by cosputtering a silicon dioxide and an indium tin oxide target. The effect of the silicon doping on the device performance and stability of the a-SITO TFTs was investigated. The field-effect mobility and stability under positive bias stress of the a-SITO TFTs with optimized Si content (0.22 at.% Si) dramatically improved to 28.7 cm(2)/Vs and 1.5 V shift of threshold voltage, respectively, compared with the values (0.72 cm(2)/Vs and 8.9 V shift) for a-SITO TFTs with 4.22 at.% Si. The role of silicon in a-SITO TFTs is discussed based on various physical and chemical analyses, including x-ray absorption spectroscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry measurements.
- URI
- https://link.springer.com/article/10.1007%2Fs11664-014-3211-5http://hdl.handle.net/20.500.11754/47341
- ISSN
- 0361-5235; 1543-186X
- DOI
- 10.1007/s11664-014-3211-5
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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