Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2018-03-15T07:23:28Z | - |
dc.date.available | 2018-03-15T07:23:28Z | - |
dc.date.issued | 2014-06 | - |
dc.identifier.citation | Journal of electronic materials, Vol.43 No.9 [2014], p 3177-3183 | en_US |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.issn | 1543-186X | - |
dc.identifier.uri | https://link.springer.com/article/10.1007%2Fs11664-014-3211-5 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/47341 | - |
dc.description.abstract | We report the fabrication of high-performance thin-film transistors (TFTs) with an amorphous silicon indium tin oxide (a-SITO) channel, which was deposited by cosputtering a silicon dioxide and an indium tin oxide target. The effect of the silicon doping on the device performance and stability of the a-SITO TFTs was investigated. The field-effect mobility and stability under positive bias stress of the a-SITO TFTs with optimized Si content (0.22 at.% Si) dramatically improved to 28.7 cm(2)/Vs and 1.5 V shift of threshold voltage, respectively, compared with the values (0.72 cm(2)/Vs and 8.9 V shift) for a-SITO TFTs with 4.22 at.% Si. The role of silicon in a-SITO TFTs is discussed based on various physical and chemical analyses, including x-ray absorption spectroscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry measurements. | en_US |
dc.language.iso | en | en_US |
dc.publisher | SPRINGER, 233 SPRING ST, NEW YORK, NY 10013 USA | en_US |
dc.subject | Silicon-doped InSnO | en_US |
dc.subject | thin-film transistor | en_US |
dc.subject | oxide semiconductor | en_US |
dc.subject | high mobility | en_US |
dc.subject | stability | en_US |
dc.subject | GE | en_US |
dc.title | High Mobility and Stability of Thin-Film Transistors Using Silicon-Doped Amorphous Indium Tin Oxide Semiconductors | en_US |
dc.type | Article | en_US |
dc.relation.no | 9 | - |
dc.relation.volume | 43 | - |
dc.identifier.doi | 10.1007/s11664-014-3211-5 | - |
dc.relation.page | 3177-3183 | - |
dc.relation.journal | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.contributor.googleauthor | Seo, T. W. | - |
dc.contributor.googleauthor | Kim, Hyun-Suk | - |
dc.contributor.googleauthor | Lee, Kwang-Ho | - |
dc.contributor.googleauthor | Chung, Kwun-Bum | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2014033040 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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