Systematic and consistent ferromagnetism in InMnP:Zn bilayers for various Mn concentrations and annealing temperatures
- Title
- Systematic and consistent ferromagnetism in InMnP:Zn bilayers for various Mn concentrations and annealing temperatures
- Author
- 윤종승
- Keywords
- Semiconductors; Chemical vapor deposition (CVD); Molecular beam epitaxy (MBE); Inp
- Issue Date
- 2013-12
- Publisher
- Korean Physical Society; 1999
- Citation
- Journal of the Korean Physical Society, Vol.63, No.11 [2013], p2158-2164
- Abstract
- The p-type InP:Zn epilayers were prepared by using metal-organic chemical vapor deposition, and Mn was subsequently deposited onto the epilayer by using molecular beam epitaxy. The p-type InMnP:Zn epilayers were annealed at relatively low temperatures of 200-350 A degrees C and contained no secondary phases such as InMn, MnP, and MnO2, as verified by x-ray diffraction. However, minute presence of MnO2 was confirmed using transmission electron microscopy, which agreed with the magnetic properties measured by using a superconducting quantum interference device (SQUID). From the SQUID measurements, consistent and systematic ferromagnetic properties with clear ferromagnetic hysteresis loops were observed. The Curie temperature, T (C) , which persisted up to similar to 180 K, was recorded depending on the Mn concentrations and annealing temperature. These results indicate that the ferromagnetic semiconductor InMnP:Zn can be fabricated at a very low annealing temperature without forming ferromagnetic precipitates except for MnO2.
- URI
- http://link.springer.com/article/10.3938%2Fjkps.63.2158http://hdl.handle.net/20.500.11754/45930
- ISSN
- 0374-4884
- DOI
- 10.3938/jkps.63.2158
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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