Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 윤종승 | - |
dc.date.accessioned | 2018-03-13T05:17:26Z | - |
dc.date.available | 2018-03-13T05:17:26Z | - |
dc.date.issued | 2013-12 | - |
dc.identifier.citation | Journal of the Korean Physical Society, Vol.63, No.11 [2013], p2158-2164 | en_US |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://link.springer.com/article/10.3938%2Fjkps.63.2158 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/45930 | - |
dc.description.abstract | The p-type InP:Zn epilayers were prepared by using metal-organic chemical vapor deposition, and Mn was subsequently deposited onto the epilayer by using molecular beam epitaxy. The p-type InMnP:Zn epilayers were annealed at relatively low temperatures of 200-350 A degrees C and contained no secondary phases such as InMn, MnP, and MnO2, as verified by x-ray diffraction. However, minute presence of MnO2 was confirmed using transmission electron microscopy, which agreed with the magnetic properties measured by using a superconducting quantum interference device (SQUID). From the SQUID measurements, consistent and systematic ferromagnetic properties with clear ferromagnetic hysteresis loops were observed. The Curie temperature, T (C) , which persisted up to similar to 180 K, was recorded depending on the Mn concentrations and annealing temperature. These results indicate that the ferromagnetic semiconductor InMnP:Zn can be fabricated at a very low annealing temperature without forming ferromagnetic precipitates except for MnO2. | en_US |
dc.description.sponsorship | This research was supported by the Leading Foreign Research Institute Recruitment Program (grant no. NRF-2012-00109) and the Basic Science Research Program (grant nos. KRF-2008-313-C00264 and 2013R1A1A2008875) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST). | en_US |
dc.language.iso | en | en_US |
dc.publisher | Korean Physical Society; 1999 | en_US |
dc.subject | Semiconductors | en_US |
dc.subject | Chemical vapor deposition (CVD) | en_US |
dc.subject | Molecular beam epitaxy (MBE) | en_US |
dc.subject | Inp | en_US |
dc.title | Systematic and consistent ferromagnetism in InMnP:Zn bilayers for various Mn concentrations and annealing temperatures | en_US |
dc.type | Article | en_US |
dc.relation.no | 11 | - |
dc.relation.volume | 63 | - |
dc.identifier.doi | 10.3938/jkps.63.2158 | - |
dc.relation.page | 2158-2164 | - |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.googleauthor | Shon, Y. | - |
dc.contributor.googleauthor | Yoon, I. T. | - |
dc.contributor.googleauthor | Lee, S. | - |
dc.contributor.googleauthor | Kwon, Y. H. | - |
dc.contributor.googleauthor | Yoon, C. S. | - |
dc.contributor.googleauthor | Park, C. S. | - |
dc.contributor.googleauthor | Lee, C. J. | - |
dc.contributor.googleauthor | Lee, D. J. | - |
dc.contributor.googleauthor | Kim, H. S. | - |
dc.contributor.googleauthor | Kang, T. W. | - |
dc.relation.code | 2013011054 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | csyoon | - |
dc.identifier.researcherID | 34769431300 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.