Engineering Electronic Properties of Graphene by Coupling with Si-Rich, Two-Dimensional Islands
- Title
- Engineering Electronic Properties of Graphene by Coupling with Si-Rich, Two-Dimensional Islands
- Author
- 박원일
- Keywords
- graphene; silicon islands; van der Waals growth; bandgap engineering; sublattice asymmetry
- Issue Date
- 2013-01
- Publisher
- AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
- Citation
- ACS NANO 권: 7 호: 1 페이지: 301-307
- Abstract
- Recent theoretical and experimental studies demonstrated that breaking of the sublattice symmetry in graphene produces an energy gap at the former Dirac point. We describe the synthesis of graphene sheets decorated with ultrathin, Si-rich two-dimensional (2D) islands (i.e., Gr:Si sheets), in which the electronic property of graphene is modulated by coupling with the Si-islands. Analyses based on transmission electron microscopy, atomic force microscopy, and electron and optical spectroscopies confirmed that Si-islands with thicknesses of similar to 2 to 4 nm and a lateral size of several tens of nm were bonded to graphene via van der Waals interactions. Field-effect transistors (FETs) based on Gr:Si sheets exhibited enhanced transconductance and maximum-to-minimum current level compared to bare-graphene FETs, and their magnitudes gradually increased with increasing coverage of Si layers on the graphene. The temperature dependent current voltage measurements of the Gr:Si sheet showed approximately a 2-fold increase in the resistance by decreasing the temperature from 250 to 10K, which confirmed the opening of the substantial bandgap (similar to 2.5-3.2 meV) in graphene by coupling with Si Islands.
- URI
- https://pubs.acs.org/doi/10.1021/nn304007xhttp://hdl.handle.net/20.500.11754/41484
- ISSN
- 1936-0851
- DOI
- 10.1021/nn304007x
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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