Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박원일 | - |
dc.date.accessioned | 2018-03-01T05:58:48Z | - |
dc.date.available | 2018-03-01T05:58:48Z | - |
dc.date.issued | 2013-01 | - |
dc.identifier.citation | ACS NANO 권: 7 호: 1 페이지: 301-307 | en_US |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | https://pubs.acs.org/doi/10.1021/nn304007x | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/41484 | - |
dc.description.abstract | Recent theoretical and experimental studies demonstrated that breaking of the sublattice symmetry in graphene produces an energy gap at the former Dirac point. We describe the synthesis of graphene sheets decorated with ultrathin, Si-rich two-dimensional (2D) islands (i.e., Gr:Si sheets), in which the electronic property of graphene is modulated by coupling with the Si-islands. Analyses based on transmission electron microscopy, atomic force microscopy, and electron and optical spectroscopies confirmed that Si-islands with thicknesses of similar to 2 to 4 nm and a lateral size of several tens of nm were bonded to graphene via van der Waals interactions. Field-effect transistors (FETs) based on Gr:Si sheets exhibited enhanced transconductance and maximum-to-minimum current level compared to bare-graphene FETs, and their magnitudes gradually increased with increasing coverage of Si layers on the graphene. The temperature dependent current voltage measurements of the Gr:Si sheet showed approximately a 2-fold increase in the resistance by decreasing the temperature from 250 to 10K, which confirmed the opening of the substantial bandgap (similar to 2.5-3.2 meV) in graphene by coupling with Si Islands. | en_US |
dc.description.sponsorship | This work was supported by National Research Foundation of Korea (NRF) through Grant No. K20704000003TA050000310, Global Research Laboratory (GRL) Program provided by the Korean Ministry of Education, Science, and Technology (MEST) in 2011 and by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) (2012-001442, 2012-0002881) | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA | en_US |
dc.subject | graphene | en_US |
dc.subject | silicon islands | en_US |
dc.subject | van der Waals growth | en_US |
dc.subject | bandgap engineering | en_US |
dc.subject | sublattice asymmetry | en_US |
dc.title | Engineering Electronic Properties of Graphene by Coupling with Si-Rich, Two-Dimensional Islands | en_US |
dc.type | Article | en_US |
dc.relation.volume | 7 | - |
dc.identifier.doi | 10.1021/nn304007x | - |
dc.relation.page | 301-307 | - |
dc.relation.journal | ACS NANO | - |
dc.contributor.googleauthor | Lee, Dong Hyun | - |
dc.contributor.googleauthor | Yi, Jae seok | - |
dc.contributor.googleauthor | Lee, Jung Min | - |
dc.contributor.googleauthor | Lee, Sang Jun | - |
dc.contributor.googleauthor | Doh, Yong Joo | - |
dc.contributor.googleauthor | Jeong, Hu Young | - |
dc.contributor.googleauthor | Lee, Zonghoon | - |
dc.contributor.googleauthor | Paik, Un gyu | - |
dc.contributor.googleauthor | Rogers, John A | - |
dc.contributor.googleauthor | Park, Won Il | - |
dc.relation.code | 2013008626 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | wipark | - |
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