Reduction of Leakage Current in InGaN-based LEDs with V-pit Embedded Structures
- Title
- Reduction of Leakage Current in InGaN-based LEDs with V-pit Embedded Structures
- Author
- 박진섭
- Keywords
- LED; Nitride; Leakage current; V-pit
- Issue Date
- 2012-05
- Publisher
- KOREAN PHYSICAL SOC, 635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY , 60, 9, 1367-1370
- Abstract
- We investigated the effects of V-pit structures embedded in the active region of n-GaN on the leakage current and the emission efficiency in InGaN/GaN light-emitting diodes (LEDs). Size-controlled V-pits were used for dislocation filtering. The V-shaped pit size was controlled by manipulating the growth temperature and pressure. The highest reverse voltage value was achieved with 150-nm-sized V-pit-embedded LEDs, which could be attributed to effective blocking of the threading dislocations that were acting as a leakage current source.
- URI
- https://link.springer.com/article/10.3938/jkps.60.1367http://hdl.handle.net/20.500.11754/41332
- ISSN
- 0374-4884
- DOI
- 10.3938/jkps.60.1367
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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