Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진섭 | - |
dc.date.accessioned | 2018-02-28T08:08:21Z | - |
dc.date.available | 2018-02-28T08:08:21Z | - |
dc.date.issued | 2012-05 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY , 60, 9, 1367-1370 | en_US |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://link.springer.com/article/10.3938/jkps.60.1367 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/41332 | - |
dc.description.abstract | We investigated the effects of V-pit structures embedded in the active region of n-GaN on the leakage current and the emission efficiency in InGaN/GaN light-emitting diodes (LEDs). Size-controlled V-pits were used for dislocation filtering. The V-shaped pit size was controlled by manipulating the growth temperature and pressure. The highest reverse voltage value was achieved with 150-nm-sized V-pit-embedded LEDs, which could be attributed to effective blocking of the threading dislocations that were acting as a leakage current source. | en_US |
dc.description.sponsorship | This work was supported by the research fund of Hanyang University (HY-2011-00000000229). | en_US |
dc.language.iso | en | en_US |
dc.publisher | KOREAN PHYSICAL SOC, 635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA | en_US |
dc.subject | LED | en_US |
dc.subject | Nitride | en_US |
dc.subject | Leakage current | en_US |
dc.subject | V-pit | en_US |
dc.title | Reduction of Leakage Current in InGaN-based LEDs with V-pit Embedded Structures | en_US |
dc.type | Article | en_US |
dc.relation.no | 9 | - |
dc.relation.volume | 60 | - |
dc.identifier.doi | 10.3938/jkps.60.1367 | - |
dc.relation.page | 1367-1370 | - |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.googleauthor | Park, Jinsub | - |
dc.contributor.googleauthor | Ha, Jun-Seok | - |
dc.relation.code | 2012205987 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jinsubpark | - |
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