Sensing Architecture for Multi-Level Cells of Polymer Memory
- Title
- Sensing Architecture for Multi-Level Cells of Polymer Memory
- Author
- 이상선
- Keywords
- Nonvolatile Memory; Polymer Memory; Multi-Level Cell; Sense Amplifier; Sensing Method
- Issue Date
- 2011-01
- Publisher
- AMER SCIENTIFIC PUBLISHERS, 26650 THE OLD RD, STE 208, VALENCIA, CA 91381-0751 USA
- Citation
- JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE 권: 8 호: 1 페이지: 43-46
- Abstract
- Memory using polymeric materials has particular resistance characteristics which should be understood since polymeric materials may represent next generation nonvolatile memory. We researched the multi-level cell (MLC) with two bits per cell. No sensing method has been applied in MLC using previous single-level cells (SLC). In this paper, we propose a new sensing architecture for a polymer memory cell array with a multi-level cell. For decoding the larger two-bit cell, we adapted a new address decoding method by adding an internal control signal. The sense amplifier architecture was operated by a generated control signal. We confirmed and verified that the new decoding method and sense amplifier architecture worked for the polymer memory of the multi-level cell.
- URI
- http://www.ingentaconnect.com/content/asp/jctn/2011/00000008/00000001/art00008
- ISSN
- 1546-1955
- DOI
- 10.1166/jctn.2011.1656
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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