Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이상선 | - |
dc.date.accessioned | 2018-02-13T07:00:42Z | - |
dc.date.available | 2018-02-13T07:00:42Z | - |
dc.date.issued | 2011-01 | - |
dc.identifier.citation | JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE 권: 8 호: 1 페이지: 43-46 | en_US |
dc.identifier.issn | 1546-1955 | - |
dc.identifier.uri | http://www.ingentaconnect.com/content/asp/jctn/2011/00000008/00000001/art00008 | - |
dc.description.abstract | Memory using polymeric materials has particular resistance characteristics which should be understood since polymeric materials may represent next generation nonvolatile memory. We researched the multi-level cell (MLC) with two bits per cell. No sensing method has been applied in MLC using previous single-level cells (SLC). In this paper, we propose a new sensing architecture for a polymer memory cell array with a multi-level cell. For decoding the larger two-bit cell, we adapted a new address decoding method by adding an internal control signal. The sense amplifier architecture was operated by a generated control signal. We confirmed and verified that the new decoding method and sense amplifier architecture worked for the polymer memory of the multi-level cell. | en_US |
dc.description.sponsorship | This work was supported by The National Research Program for 0.1-Terabit Non-volatile Memory Development sponsored by the Ministry of Knowledge Economy, Korea and supported by the MKE (The Ministry of Knowledge Economy), Korea, under the ITRC (Information Technology Research Center) support program supervised by the IITA (Institute for Information Technology Advancement) (IITA-2009-C1090-0902-0040). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER SCIENTIFIC PUBLISHERS, 26650 THE OLD RD, STE 208, VALENCIA, CA 91381-0751 USA | en_US |
dc.subject | Nonvolatile Memory | en_US |
dc.subject | Polymer Memory | en_US |
dc.subject | Multi-Level Cell | en_US |
dc.subject | Sense Amplifier | en_US |
dc.subject | Sensing Method | en_US |
dc.title | Sensing Architecture for Multi-Level Cells of Polymer Memory | en_US |
dc.type | Article | en_US |
dc.relation.no | 1 | - |
dc.relation.volume | 8 | - |
dc.identifier.doi | 10.1166/jctn.2011.1656 | - |
dc.relation.page | 43-46 | - |
dc.relation.journal | JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE | - |
dc.contributor.googleauthor | Kim, Jung-Ha | - |
dc.contributor.googleauthor | Lee, Jong-Hoon | - |
dc.contributor.googleauthor | Lee, Sang-Sun | - |
dc.relation.code | 2011213382 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | ssnlee | - |
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