Multilevel Charge Storage in a Multiple Alloy Nanodot Memory
- Title
- Multilevel Charge Storage in a Multiple Alloy Nanodot Memory
- Author
- 송윤흡
- Keywords
- SILICON NANOCRYSTALS; NONVOLATILE MEMORY; OPERATION; GROWTH; OXIDE; DOTS
- Issue Date
- 2011-09
- Publisher
- IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
- Citation
- Japanese Journal of Applied Physics, Vol.50, No.9 [2011], p95001 ~ 0950013
- Abstract
- A multilevel charge storage in a multiple FePt alloy nanodot memory is investigated for the first time. It is demonstrated that the memory structure with multiple FePt nanodot layers effectively realizes a multilevel state by the adjustment of gate voltage. Metal oxide semiconductor (MOS) capacitors with four FePt nanodot layers as a floating gate are fabricated to evaluate the multilevel cell characteristic and reliability. Here, the effect of memory window for a nanodot diameter is also investigated, and it is found that a smaller dot size gives a larger window. From the results showing good endurance and retention characteristics for the multilevel states, it is expected that a multiple FePt nanodot memory using Fowler-Nordheim (FN) tunneling can be a candidate structure for the future multilevel NAND flash memory. (C) 2011 The Japan Society of Applied Physics
- URI
- http://iopscience.iop.org/article/10.1143/JJAP.50.095001/meta
- ISSN
- 1347-4065
- DOI
- 10.1143/JJAP.50.095001
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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