Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 송윤흡 | - |
dc.date.accessioned | 2018-02-13T02:31:25Z | - |
dc.date.available | 2018-02-13T02:31:25Z | - |
dc.date.issued | 2011-09 | - |
dc.identifier.citation | Japanese Journal of Applied Physics, Vol.50, No.9 [2011], p95001 ~ 0950013 | en_US |
dc.identifier.issn | 1347-4065 | - |
dc.identifier.uri | http://iopscience.iop.org/article/10.1143/JJAP.50.095001/meta | - |
dc.description.abstract | A multilevel charge storage in a multiple FePt alloy nanodot memory is investigated for the first time. It is demonstrated that the memory structure with multiple FePt nanodot layers effectively realizes a multilevel state by the adjustment of gate voltage. Metal oxide semiconductor (MOS) capacitors with four FePt nanodot layers as a floating gate are fabricated to evaluate the multilevel cell characteristic and reliability. Here, the effect of memory window for a nanodot diameter is also investigated, and it is found that a smaller dot size gives a larger window. From the results showing good endurance and retention characteristics for the multilevel states, it is expected that a multiple FePt nanodot memory using Fowler-Nordheim (FN) tunneling can be a candidate structure for the future multilevel NAND flash memory. (C) 2011 The Japan Society of Applied Physics | en_US |
dc.description.sponsorship | This work was supported by the research fund of Hanyang University (HY-2009-O). The authors would like to thank M. Murugesan, Y. L. Pei, W. C. Jung, and T. Fukushima. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND | en_US |
dc.subject | SILICON NANOCRYSTALS | en_US |
dc.subject | NONVOLATILE MEMORY | en_US |
dc.subject | OPERATION | en_US |
dc.subject | GROWTH | en_US |
dc.subject | OXIDE | en_US |
dc.subject | DOTS | en_US |
dc.title | Multilevel Charge Storage in a Multiple Alloy Nanodot Memory | en_US |
dc.type | Article | en_US |
dc.relation.no | 9 | - |
dc.relation.volume | 50 | - |
dc.identifier.doi | 10.1143/JJAP.50.095001 | - |
dc.relation.page | 095001-1-095001-3 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Lee, Gae-Hun | - |
dc.contributor.googleauthor | Lee, Jung-Min | - |
dc.contributor.googleauthor | Song, Yun-Heub | - |
dc.contributor.googleauthor | Bea, Ji-Chel | - |
dc.contributor.googleauthor | Tanaka, Tetsu | - |
dc.contributor.googleauthor | Koyanagi, Mitsumasa | - |
dc.relation.code | 2011217131 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | yhsong2008 | - |
dc.identifier.researcherID | 36081079600 | - |
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