Bidirectional Two-Terminal Switching Device for Crossbar Array Architecture
- Title
- Bidirectional Two-Terminal Switching Device for Crossbar Array Architecture
- Author
- 송윤흡
- Keywords
- Engineered Materials, Dielectrics and Plasmas; Components, Circuits, Devices and Systems; Junctions; Doping; Switches; Computer architecture; Microprocessors; Magnetic tunneling; Random access memory; spin-transfer torque (STT) magnetic random access memory (MRAM); Bidirectional current write; crossbar array; junction device
- Issue Date
- 2011-08
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
- Citation
- IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 32(8):1023-1025 Aug, 2011
- Abstract
- We propose a bilateral switching poly-Si junction device to realize a crossbar array with a perpendicular spin-transfer torque (STT) magnetic random access memory (MRAM). An N(+)/P/N(+) bilateral junction device with two bias terminals provides bidirectional current flow enough to write STT MRAM by a drain induced barrier lowering under a reverse bias of N(+)/P. In addition, asymmetrical doping for two N(+) terminals provides a high on-off ratio of 10(7) under read condition, which is acceptable for a crossbar array. From this work, it is expected that a bilateral poly-Si junction will be a promising switch device to achieve crossbar architecture with a perpendicular STT MRAM.
- URI
- http://ieeexplore.ieee.org/document/5936095/?reload=truehttp://hdl.handle.net/20.500.11754/36108
- ISSN
- 1558-0563; 0741-3106
- DOI
- 10.1109/LED.2011.2157452
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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