Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 송윤흡 | - |
dc.date.accessioned | 2018-02-08T02:03:36Z | - |
dc.date.available | 2018-02-08T02:03:36Z | - |
dc.date.issued | 2011-08 | - |
dc.identifier.citation | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 32(8):1023-1025 Aug, 2011 | en_US |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://ieeexplore.ieee.org/document/5936095/?reload=true | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/36108 | - |
dc.description.abstract | We propose a bilateral switching poly-Si junction device to realize a crossbar array with a perpendicular spin-transfer torque (STT) magnetic random access memory (MRAM). An N(+)/P/N(+) bilateral junction device with two bias terminals provides bidirectional current flow enough to write STT MRAM by a drain induced barrier lowering under a reverse bias of N(+)/P. In addition, asymmetrical doping for two N(+) terminals provides a high on-off ratio of 10(7) under read condition, which is acceptable for a crossbar array. From this work, it is expected that a bilateral poly-Si junction will be a promising switch device to achieve crossbar architecture with a perpendicular STT MRAM. | en_US |
dc.description.sponsorship | IEEE Electron Devices Society | en_US |
dc.language.iso | other | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA | en_US |
dc.subject | Engineered Materials, Dielectrics and Plasmas | en_US |
dc.subject | Components, Circuits, Devices and Systems | en_US |
dc.subject | Junctions | en_US |
dc.subject | Doping | en_US |
dc.subject | Switches | en_US |
dc.subject | Computer architecture | en_US |
dc.subject | Microprocessors | en_US |
dc.subject | Magnetic tunneling | en_US |
dc.subject | Random access memory | en_US |
dc.subject | spin-transfer torque (STT) magnetic random access memory (MRAM) | en_US |
dc.subject | Bidirectional current write | en_US |
dc.subject | crossbar array | en_US |
dc.subject | junction device | en_US |
dc.title | Bidirectional Two-Terminal Switching Device for Crossbar Array Architecture | en_US |
dc.type | Article | en_US |
dc.relation.no | 8 | - |
dc.relation.volume | 32 | - |
dc.identifier.doi | 10.1109/LED.2011.2157452 | - |
dc.relation.page | 1023-1025 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.contributor.googleauthor | Park, Seung Young | - |
dc.contributor.googleauthor | Lee, Jung Min | - |
dc.contributor.googleauthor | Yang, Hyung Jun | - |
dc.contributor.googleauthor | Kil, Gyu Hyun | - |
dc.contributor.googleauthor | Song, Yun Heub | - |
dc.relation.code | 2011203822 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | yhsong2008 | - |
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