MoO3 분말의 수소환원을 통한 CIGS계 후면 전극용 Mo 박막제조

Abstract

In order to obtain a suitable back contacting electrode for Cu(InGa)Se-2-based photovoltaic devices, a molybdenum thin film was deposited using a chemical vapor transport (CVT) during the hydrogen reduction of MoO3 powder. A MoO2 thin film was successfully deposited on substrates by using the CVT of volatile MoO3(OH)(2) at 550 degrees C for 60 min in a H-2 atmosphere. The Mo thin film was obtained by reduction of MoO2 at 650 degrees C in a H-2 atmosphere. The Mo thin film on the substrate presented a low sheet resistance of approximately 1 Omega/sq.