Impact of diffusionless anneal using dynamic surface anneal on the electrical properties of a high-k/metal gate stack in metal-oxide-semiconductor devices
- Title
- Impact of diffusionless anneal using dynamic surface anneal on the electrical properties of a high-k/metal gate stack in metal-oxide-semiconductor devices
- Author
- 최창환
- Issue Date
- 2011-03
- Publisher
- Amer INST Physics
- Citation
- Applied Physics Letters, 2011, 98(12), 123506
- Abstract
- The impact of diffusionless anneal using dynamic surface anneal (DSA) on the electrical properties of p-type metal-oxide-semiconductor devices with high-k gate dielectrics and metal gate was investigated by monitoring flatband voltage (V(FB)) and equivalent oxide thickness (EOT) change. Compared to rapid thermal anneal, DSA induces a positive V(FB) shift without EOT degradation. This finding is attributed to suppression of positively charged oxygen vacancies [V(o)(++)] generation in high-k dielectrics due to the shorter thermal budget. Processing parameters including high-k dielectrics, TiN metal gate thickness, and Si cap deposition temperature significantly affect thermally induced-oxygen vacancies, leading to different V(FB) behaviors. (c) 2011 American Institute of Physics. [doi:10.1063/1.3570655]
- URI
- https://aip.scitation.org/doi/10.1063/1.3570655
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3570655
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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