Role of the crystallinity of ZnO films in the electrical properties of bottom-gate thin film transistors
- Title
- Role of the crystallinity of ZnO films in the electrical properties of bottom-gate thin film transistors
- Author
- 박진성
- Keywords
- ZnO; Thin film transistor; Hump; Microstructure; Ostwald ripening
- Issue Date
- 2011-04
- Publisher
- ELSEVIER SCIENCE SA
- Citation
- THIN SOLID FILMS, v. 519, Page. 6801-6805
- Abstract
- The strong correlation between the microstructural characteristics of ZnO channel layers grown at various temperatures by radio-frequency magnetron sputtering and the electrical performances of resulting bottom-gate thin film transistors (TFTs) was reported. Transmission electron microscopy revealed that increasing growth temperature enhanced degree of c-axis preferred orientation and enlarged width of columns in the ZnO films. The ZnO channel layers grown at 250 and 350 degrees C exhibited TFT saturation behavior. However, growing them at >= 350 degrees C produced small grains in the junctions of ZnO/SiO(2) interface and grain boundaries, which led to hump behavior in TFT transfer curve caused by formation of additional boundaries. (C) 2011 Elsevier B.V. All rights reserved.
- URI
- http://www.sciencedirect.com/science/article/pii/S0040609011008571?via%3Dihubhttp://hdl.handle.net/20.500.11754/35026
- ISSN
- 0040-6090
- DOI
- 10.1016/j.tsf.2011.04.041
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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