Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2018-02-02T06:06:19Z | - |
dc.date.available | 2018-02-02T06:06:19Z | - |
dc.date.issued | 2011-04 | - |
dc.identifier.citation | THIN SOLID FILMS, v. 519, Page. 6801-6805 | en_US |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0040609011008571?via%3Dihub | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/35026 | - |
dc.description.abstract | The strong correlation between the microstructural characteristics of ZnO channel layers grown at various temperatures by radio-frequency magnetron sputtering and the electrical performances of resulting bottom-gate thin film transistors (TFTs) was reported. Transmission electron microscopy revealed that increasing growth temperature enhanced degree of c-axis preferred orientation and enlarged width of columns in the ZnO films. The ZnO channel layers grown at 250 and 350 degrees C exhibited TFT saturation behavior. However, growing them at >= 350 degrees C produced small grains in the junctions of ZnO/SiO(2) interface and grain boundaries, which led to hump behavior in TFT transfer curve caused by formation of additional boundaries. (C) 2011 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE SA | en_US |
dc.subject | ZnO | en_US |
dc.subject | Thin film transistor | en_US |
dc.subject | Hump | en_US |
dc.subject | Microstructure | en_US |
dc.subject | Ostwald ripening | en_US |
dc.title | Role of the crystallinity of ZnO films in the electrical properties of bottom-gate thin film transistors | en_US |
dc.type | Article | en_US |
dc.relation.volume | 519 | - |
dc.identifier.doi | 10.1016/j.tsf.2011.04.041 | - |
dc.relation.page | 6801-6805 | - |
dc.relation.journal | THIN SOLID FILMS | - |
dc.contributor.googleauthor | Lee, JH | - |
dc.contributor.googleauthor | Ahn, CH | - |
dc.contributor.googleauthor | Hwang, S | - |
dc.contributor.googleauthor | Woo, CH | - |
dc.contributor.googleauthor | Park, JS | - |
dc.contributor.googleauthor | Cho, HK | - |
dc.contributor.googleauthor | Lee, JY | - |
dc.relation.code | 2011209470 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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