Fabrication of trench nanostructures for extreme ultraviolet lithography masks by atomic force microscope lithography
- Title
- Fabrication of trench nanostructures for extreme ultraviolet lithography masks by atomic force microscope lithography
- Author
- 안진호
- Keywords
- SCANNING-TUNNELING-MICROSCOPY; HYDROGEN-PASSIVATED SILICON; ANODIZATION LITHOGRAPHY; NANOLITHOGRAPHY; OXIDE; MECHANISM; ABSORBER; RESIST
- Issue Date
- 2011-01
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v. 29, NO 1, Page. -
- Abstract
- We describe methods to fabricate extreme ultraviolet lithography (EUVL) absorber mask patterns by atomic force microscope (AFM) lithography and inductively coupled plasma (ICP) etching. AFM lithography, based on anodization and cross-linking polymer resist, was applied to fabricate trench structures using only Ta and Cr/Ta bilayers. In particular, the top Cr layer was used not only as a hard mask to etch the underlying Ta in dry-etching, but also as an absorber material together with Ta. The Cr oxide or Ta with respect to Cr was eliminated due to the clear etch-selectivity of ICP dry-etching using C(4)F(8) gas. This is a simple fabrication technique using AFM lithography fabricated metal trenches for the production of isolated metal structures as well as for producing EUVL absorber patterns. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3534025]
- URI
- http://avs.scitation.org/doi/abs/10.1116/1.3534025
- ISSN
- 1071-1023
- DOI
- 10.1116/1.3534025
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
- Files in This Item:
- Fabrication of trench nanostructures for extreme ultraviolet lithography masks by atomic force microscope lithography.pdfDownload
- Export
- RIS (EndNote)
- XLS (Excel)
- XML