Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안진호 | - |
dc.date.accessioned | 2018-02-02T02:12:55Z | - |
dc.date.available | 2018-02-02T02:12:55Z | - |
dc.date.issued | 2011-01 | - |
dc.identifier.citation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v. 29, NO 1, Page. - | en_US |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | http://avs.scitation.org/doi/abs/10.1116/1.3534025 | - |
dc.description.abstract | We describe methods to fabricate extreme ultraviolet lithography (EUVL) absorber mask patterns by atomic force microscope (AFM) lithography and inductively coupled plasma (ICP) etching. AFM lithography, based on anodization and cross-linking polymer resist, was applied to fabricate trench structures using only Ta and Cr/Ta bilayers. In particular, the top Cr layer was used not only as a hard mask to etch the underlying Ta in dry-etching, but also as an absorber material together with Ta. The Cr oxide or Ta with respect to Cr was eliminated due to the clear etch-selectivity of ICP dry-etching using C(4)F(8) gas. This is a simple fabrication technique using AFM lithography fabricated metal trenches for the production of isolated metal structures as well as for producing EUVL absorber patterns. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3534025] | en_US |
dc.description.sponsorship | This work was supported by the National Program for Tera-level Nanodevices (TND), the International Research & Development Program of the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) of Korea (Grant No. K20901000006-09E0100-00610), the Seoul R&D Program (10919), the Korea Foundation for International Cooperation of Science and Technology (KICOS), and the research fund of Hanyang University (HYU-2011-T). | en_US |
dc.language.iso | en | en_US |
dc.publisher | A V S AMER INST PHYSICS | en_US |
dc.subject | SCANNING-TUNNELING-MICROSCOPY | en_US |
dc.subject | HYDROGEN-PASSIVATED SILICON | en_US |
dc.subject | ANODIZATION LITHOGRAPHY | en_US |
dc.subject | NANOLITHOGRAPHY | en_US |
dc.subject | OXIDE | en_US |
dc.subject | MECHANISM | en_US |
dc.subject | ABSORBER | en_US |
dc.subject | RESIST | en_US |
dc.title | Fabrication of trench nanostructures for extreme ultraviolet lithography masks by atomic force microscope lithography | en_US |
dc.type | Article | en_US |
dc.relation.no | 1 | - |
dc.relation.volume | 29 | - |
dc.identifier.doi | 10.1116/1.3534025 | - |
dc.relation.page | - | - |
dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.contributor.googleauthor | Yeom, Geun Young | - |
dc.contributor.googleauthor | Kwon, Gwangmin | - |
dc.contributor.googleauthor | Ko, Kyeongkeun | - |
dc.contributor.googleauthor | Lee, Haiwon | - |
dc.contributor.googleauthor | Lim, Woongsun | - |
dc.contributor.googleauthor | Lee, Sunwoo | - |
dc.contributor.googleauthor | Ahn, Jinho | - |
dc.relation.code | 2011214140 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jhahn | - |
dc.identifier.researcherID | B-8510-2017 | - |
dc.identifier.orcid | http://orcid.org/0000-0002-1176-7448 | - |
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