Novel Self-Reference Sense Amplifier for Spin-Transfer-Torque Magneto-Resistive Random Access Memory
- Title
- Novel Self-Reference Sense Amplifier for Spin-Transfer-Torque Magneto-Resistive Random Access Memory
- Author
- 송윤흡
- Keywords
- Magneto-resistive Random Access Memory; MRAM; self-reference; sense amplifier; operation speed; sense margin
- Issue Date
- 2016-02
- Publisher
- IEEK PUBLICATION CENTER
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v. 16, NO 1, Page. 31-38
- Abstract
- A novel self-reference sense amplifier with parallel reading during writing operation is proposed. Read access time is improved compared to conventional self-reference scheme with fast operation speed by reducing operation steps to 1 for read operation cycle using parallel reading scheme, while large sense margin competitive to conventional destructive scheme is obtained by using self-reference scheme. The simulation was performed using standard 0.18 mu m CMOS process. The proposed self-reference sense amplifier improved not only the operation speed of less than 20 ns which is comparable to non-destructive sense amplifier, but also sense margin over 150 mV which is larger than conventional sensing schemes. The proposed scheme is expected to be very helpful for engineers for developing MRAM technology.
- URI
- http://koreascience.or.kr/article/ArticleFullRecord.jsp?cn=E1STAN_2016_v16n1_31http://hdl.handle.net/20.500.11754/34099
- ISSN
- 1598-1657; 2233-4866
- DOI
- 10.5573/JSTS.2016.16.1.031
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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