Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 송윤흡 | - |
dc.date.accessioned | 2017-12-13T01:04:56Z | - |
dc.date.available | 2017-12-13T01:04:56Z | - |
dc.date.issued | 2016-02 | - |
dc.identifier.citation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v. 16, NO 1, Page. 31-38 | en_US |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.issn | 2233-4866 | - |
dc.identifier.uri | http://koreascience.or.kr/article/ArticleFullRecord.jsp?cn=E1STAN_2016_v16n1_31 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/34099 | - |
dc.description.abstract | A novel self-reference sense amplifier with parallel reading during writing operation is proposed. Read access time is improved compared to conventional self-reference scheme with fast operation speed by reducing operation steps to 1 for read operation cycle using parallel reading scheme, while large sense margin competitive to conventional destructive scheme is obtained by using self-reference scheme. The simulation was performed using standard 0.18 mu m CMOS process. The proposed self-reference sense amplifier improved not only the operation speed of less than 20 ns which is comparable to non-destructive sense amplifier, but also sense margin over 150 mV which is larger than conventional sensing schemes. The proposed scheme is expected to be very helpful for engineers for developing MRAM technology. | en_US |
dc.description.sponsorship | The authors would like to thank C.-K. Kim of the DRAM design team, Memory Division, Samsung Electronics Co., Ltd. for his support and helpful discussions. This research was supported by the MOTIE (Ministry of Trade, Industry & Energy (10044608) and by the KSRC (Korea Semiconductor Research Consortium) support program for the development of future semiconductor devices. And, it was also supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (NRF-2015R1A2A2A01007289). | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEK PUBLICATION CENTER | en_US |
dc.subject | Magneto-resistive Random Access Memory | en_US |
dc.subject | MRAM | en_US |
dc.subject | self-reference | en_US |
dc.subject | sense amplifier | en_US |
dc.subject | operation speed | en_US |
dc.subject | sense margin | en_US |
dc.title | Novel Self-Reference Sense Amplifier for Spin-Transfer-Torque Magneto-Resistive Random Access Memory | en_US |
dc.type | Article | en_US |
dc.relation.no | 1 | - |
dc.relation.volume | 16 | - |
dc.identifier.doi | 10.5573/JSTS.2016.16.1.031 | - |
dc.relation.page | 31-38 | - |
dc.relation.journal | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.contributor.googleauthor | Choi, Jun-Tae | - |
dc.contributor.googleauthor | Kil, Gyu-Hyun | - |
dc.contributor.googleauthor | Kim, Kyu-Beom | - |
dc.contributor.googleauthor | Song, Yun-Heub | - |
dc.relation.code | 2016010716 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | yhsong2008 | - |
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