Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2017-03-09T07:03:19Z | - |
dc.date.available | 2017-03-09T07:03:19Z | - |
dc.date.issued | 2015-07 | - |
dc.identifier.citation | THIN SOLID FILMS, v. 587, NO TSF-D-14-01592, Page. 71-74 | en_US |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0040609014012802 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/25984 | - |
dc.description.abstract | Nonvolatile memory devices were fabricated utilizing Ga and Sn co-doped ZnO (GZTO) films formed by using a solution process method. X-ray diffraction patterns showed that the crystallinity of the annealed GZTO films was an amorphous phase. X-ray photoelectron spectroscopy spectra of the GZTO films depicted Zn - O, Ga - O, and Sn - O bonds. Current-voltage measurements on the Al/GZTO/indium-tin-oxide (ITO) devices at 300 K showed bipolar resistive switching behaviors. The resistances at both the low resistance state (LRS) and high resistance state (HRS) measured at 0.5 V for the devices maintain almost constant without any damage and breakdown above 130 s, indicative of the memory stability of the devices. A difference in the resistance between the HRS and the LRS was more than 1 order of the magnitude. The conduction mechanisms of the HRS in the set process for the Al/GZTO/ITO devices were dominated by a space-charge-limited current model. (C) 2015 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2013-016467). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE SA | en_US |
dc.subject | Nonvolatile memory devices | en_US |
dc.subject | Gallium zinc tin oxide | en_US |
dc.subject | Solution process | en_US |
dc.subject | Bipolar resistive switching behavior | en_US |
dc.subject | Conduction mechanisms | en_US |
dc.title | Resistive switching characteristics and conduction mechanisms of nonvolatile memory devices based on Ga and Sn co-doped ZnO films | en_US |
dc.type | Article | en_US |
dc.relation.no | TSF-D-14-01592 | - |
dc.relation.volume | 587 | - |
dc.identifier.doi | 10.1016/j.tsf.2014.12.021 | - |
dc.relation.page | 71-74 | - |
dc.relation.journal | THIN SOLID FILMS | - |
dc.contributor.googleauthor | Oh, Dohyun | - |
dc.contributor.googleauthor | Yun, Dong Yeol | - |
dc.contributor.googleauthor | Lee, Nam Hyun | - |
dc.contributor.googleauthor | Kim, Tae Whan | - |
dc.relation.code | 2015002894 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
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