TY - JOUR AU - κΉ€νƒœν™˜ DA - 2015/07 PY - 2015 UR - http://www.sciencedirect.com/science/article/pii/S0040609014012802 UR - http://hdl.handle.net/20.500.11754/25984 AB - Nonvolatile memory devices were fabricated utilizing Ga and Sn co-doped ZnO (GZTO) films formed by using a solution process method. X-ray diffraction patterns showed that the crystallinity of the annealed GZTO films was an amorphous phase. X-ray photoelectron spectroscopy spectra of the GZTO films depicted Zn - O, Ga - O, and Sn - O bonds. Current-voltage measurements on the Al/GZTO/indium-tin-oxide (ITO) devices at 300 K showed bipolar resistive switching behaviors. The resistances at both the low resistance state (LRS) and high resistance state (HRS) measured at 0.5 V for the devices maintain almost constant without any damage and breakdown above 130 s, indicative of the memory stability of the devices. A difference in the resistance between the HRS and the LRS was more than 1 order of the magnitude. The conduction mechanisms of the HRS in the set process for the Al/GZTO/ITO devices were dominated by a space-charge-limited current model. (C) 2015 Elsevier B.V. All rights reserved. PB - ELSEVIER SCIENCE SA KW - Nonvolatile memory devices KW - Gallium zinc tin oxide KW - Solution process KW - Bipolar resistive switching behavior KW - Conduction mechanisms TI - Resistive switching characteristics and conduction mechanisms of nonvolatile memory devices based on Ga and Sn co-doped ZnO films IS - TSF-D-14-01592 VL - 587 DO - 10.1016/j.tsf.2014.12.021 T2 - THIN SOLID FILMS ER -