Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 강보수 | - |
dc.date.accessioned | 2024-08-26T02:32:54Z | - |
dc.date.available | 2024-08-26T02:32:54Z | - |
dc.date.issued | 2022-05-24 | - |
dc.identifier.citation | ADVANCED SCIENCE, v. 9, no 22, page. 1-9 | en_US |
dc.identifier.issn | 2198-3844 | en_US |
dc.identifier.uri | https://onlinelibrary.wiley.com/doi/10.1002/advs.202201502 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/191838 | - |
dc.description.abstract | In the era of "big data," the cognitive system of the human brain is being mimicked through hardware implementation of highly accurate neuromorphic computing by progressive weight update in synaptic electronics. Low-energy synaptic operation requires both low reading current and short operation time to be applicable to large-scale neuromorphic computing systems. In this study, an energy-efficient synaptic device is implemented comprising a Ni/Pb(Zr0.52Ti0.48)O-3 (PZT)/0.5 wt.% Nb-doped SrTiO3 (Nb:STO) heterojunction with a low reading current of 10 nA and short operation time of 20-100 ns. Ultralow femtojoule operation below 9 fJ at a synaptic event, which is comparable to the energy required for synaptic events in the human brain (10 fJ), is achieved by adjusting the Schottky barrier between the top electrode and ferroelectric film. Moreover, progressive domain switching in ferroelectric PZT successfully induces both low nonlinearity/asymmetry and good stability of the weight update. The synaptic device developed here can facilitate the development of large-scale neuromorphic arrays for artificial neural networks with low energy consumption and high accuracy. | en_US |
dc.description.sponsorship | S.K. and C.Y. contributed equally to this work. This work was supported by the National R&D Programs (No. 2013R1A3A2042120, No. 2022R1A2C3004135, and No. 2021M3F3A2A01037740) and Nano·Material Technology Development Program (No. 2021M3H4A1A03054864) through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT, KIST Institutional Program (No. 2E31221-21-049), and Konkuk University Researcher Fund in 2020. | en_US |
dc.language | en_US | en_US |
dc.publisher | WILEY | en_US |
dc.relation.ispartofseries | v. 9, no 22;1-9 | - |
dc.title | Progressive and Stable Synaptic Plasticity with Femtojoule Energy Consumption by the Interface Engineering of a Metal/Ferroelectric/Semiconductor | en_US |
dc.type | Article | en_US |
dc.relation.no | 22 | - |
dc.relation.volume | 9 | - |
dc.identifier.doi | https://doi.org/10.1002/advs.202201502 | en_US |
dc.relation.page | 1-9 | - |
dc.relation.journal | ADVANCED SCIENCE | - |
dc.contributor.googleauthor | Kim, Sohwi | - |
dc.contributor.googleauthor | Yoon, Chansoo | - |
dc.contributor.googleauthor | Oh, Gwangtaek | - |
dc.contributor.googleauthor | Lee, Young Woong | - |
dc.contributor.googleauthor | Shin, Minjeong | - |
dc.contributor.googleauthor | Kee, Eun Hee | - |
dc.contributor.googleauthor | Park, Bae Ho | - |
dc.contributor.googleauthor | Lee, Ji Hye | - |
dc.contributor.googleauthor | Park, Sanghyun | - |
dc.contributor.googleauthor | Kang, Bo Soo | - |
dc.relation.code | 2022035648 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | bosookang | - |
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