Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction
- Title
- Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction
- Author
- 진지동
- Keywords
- weak light detection; asymmetric structure; self-driven photodetection; light-triggered anti-ambipolar transistors
- Issue Date
- 2024-07-02
- Publisher
- AMER CHEMICAL SOC
- Citation
- NANO LETTERS, v. 24, no 28, page. 8602-8608
- Abstract
- Currently, the construction of anti-ambipolar transistors (AATs) is primarily based on asymmetric heterostructures, which are challenging to fabricate. AATs used for photodetection are accompanied by dark currents that prove difficult to suppress, resulting in reduced sensitivity. This work presents light-triggered AATs based on an in-plane lateral WSe2 homojunction without van der Waals heterostructures. In this device, the WSe2 channel is partially electrically controlled by the back gate due to the screening effect of the bottom electrode, resulting in a homojunction that is dynamically modulated with gate voltage, exhibiting electrostatically reconfigurable and light-triggered anti-ambipolar behaviors. It exhibits high responsivity (188 A/W) and detectivity (8.94 x 10(14) Jones) under 635 nm illumination with a low power density of 0.23 mu W/cm(2), promising a new approach to low-power, high-performance photodetectors. Moreover, the device demonstrates efficient self-driven photodetection. Furthermore, ternary inverters are realized using monolithic WSe2, simplifying the manufacturing of multivalued logic devices.
- URI
- https://pubs.acs.org/doi/10.1021/acs.nanolett.4c01679https://repository.hanyang.ac.kr/handle/20.500.11754/191739
- ISSN
- 1530-6984
- DOI
- https://doi.org/10.1021/acs.nanolett.4c01679
- Appears in Collections:
- ETC[S] > 연구정보
- Files in This Item:
- 2024.7_진지동_Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction.pdfDownload
- Export
- RIS (EndNote)
- XLS (Excel)
- XML