Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 진지동 | - |
dc.date.accessioned | 2024-08-22T00:33:42Z | - |
dc.date.available | 2024-08-22T00:33:42Z | - |
dc.date.issued | 2024-07-02 | - |
dc.identifier.citation | NANO LETTERS, v. 24, no 28, page. 8602-8608 | en_US |
dc.identifier.issn | 1530-6984 | en_US |
dc.identifier.uri | https://pubs.acs.org/doi/10.1021/acs.nanolett.4c01679 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/191739 | - |
dc.description.abstract | Currently, the construction of anti-ambipolar transistors (AATs) is primarily based on asymmetric heterostructures, which are challenging to fabricate. AATs used for photodetection are accompanied by dark currents that prove difficult to suppress, resulting in reduced sensitivity. This work presents light-triggered AATs based on an in-plane lateral WSe2 homojunction without van der Waals heterostructures. In this device, the WSe2 channel is partially electrically controlled by the back gate due to the screening effect of the bottom electrode, resulting in a homojunction that is dynamically modulated with gate voltage, exhibiting electrostatically reconfigurable and light-triggered anti-ambipolar behaviors. It exhibits high responsivity (188 A/W) and detectivity (8.94 x 10(14) Jones) under 635 nm illumination with a low power density of 0.23 mu W/cm(2), promising a new approach to low-power, high-performance photodetectors. Moreover, the device demonstrates efficient self-driven photodetection. Furthermore, ternary inverters are realized using monolithic WSe2, simplifying the manufacturing of multivalued logic devices. | en_US |
dc.description.sponsorship | This work was financed by the National Key Research andDevelopment Program of China (2022YFA1405200 and 2022YFB3603900), the National Natural Science Foundationof China (62074094 and 62204143), Royal Society grants(IEC/R2/170155 and NA170415), the Natural ScienceFoundation of Shandong Province (ZR2020ZD03,ZR2022ZD04, ZR2022ZD05, and ZR2020QF082), theNatural Science Foundation of Jiangsu Province(BK20200221), and the Key Research and DevelopmentProgram of Shandong Province (2017GGX10111). | en_US |
dc.language | en_US | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.relation.ispartofseries | v. 24, no 28;8602-8608 | - |
dc.subject | weak light detection | en_US |
dc.subject | asymmetric structure | en_US |
dc.subject | self-driven photodetection | en_US |
dc.subject | light-triggered anti-ambipolar transistors | en_US |
dc.title | Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction | en_US |
dc.type | Article | en_US |
dc.relation.no | 28 | - |
dc.relation.volume | 24 | - |
dc.identifier.doi | https://doi.org/10.1021/acs.nanolett.4c01679 | en_US |
dc.relation.page | 8602-8608 | - |
dc.relation.journal | NANO LETTERS | - |
dc.contributor.googleauthor | Han, Hecheng | - |
dc.contributor.googleauthor | Zhang, Baoqing | - |
dc.contributor.googleauthor | Zhang, Zihao | - |
dc.contributor.googleauthor | Wang, Yiming | - |
dc.contributor.googleauthor | Liu, Chuan | - |
dc.contributor.googleauthor | Singh, Arun Kumar | - |
dc.contributor.googleauthor | Song, Aimin | - |
dc.contributor.googleauthor | Li, Yuxiang | - |
dc.contributor.googleauthor | Jin, Jidong | - |
dc.contributor.googleauthor | Zhang, Jiawei | - |
dc.relation.code | 2024001720 | - |
dc.sector.campus | E | - |
dc.sector.daehak | INDUSTRY-UNIVERSITY COOPERATION FOUNDATION(ERICA)[E] | - |
dc.sector.department | RESEARCH INSTITUTE | - |
dc.identifier.pid | jinjidong | - |
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