Determining the Turn-On Voltage of GaN-Based Light-Emitting Diodes: From Near-Ultraviolet to Green Spectra
- Title
- Determining the Turn-On Voltage of GaN-Based Light-Emitting Diodes: From Near-Ultraviolet to Green Spectra
- Author
- 심종인
- Keywords
- INTERNAL QUANTUM EFFICIENCY
- Issue Date
- 2023-12-07
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v. 12, NO 12, Page. 1-4
- Abstract
- This work investigates the turn-on voltage (V on) estimation methods from experimental data of InGaN-based multiple-quantum-well light-emitting diodes (LEDs) with emission spectra from near-ultraviolet to green wavelengths. Three different methods are examined: fixed current intercept, linear fitting of current-voltage curve, and the minimum ideality factor (n ideal). The voltage at minimum n ideal consistently represents the on-state of LEDs since it describes the carrier recombination processes reflected in light output power (LOP) and the external quantum efficiency (EQE). Beyond the voltage at minimum n ideal, samples' LOPs start to increase abruptly, with the EQEs reaching ˃= 54% of the peak EQE values. For V on determined by other methods, samples'LOPs are already turned on and the EQEs exceed their peak value. Therefore, using the minimum n ideal is a suitable method for determining Von of an LED.
- URI
- https://iopscience.iop.org/article/10.1149/2162-8777/ad0fedhttps://repository.hanyang.ac.kr/handle/20.500.11754/190892
- ISSN
- 2162-8769; 2162-8777
- DOI
- 10.1149/2162-8777/ad0fed
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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