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dc.contributor.author심종인-
dc.date.accessioned2024-06-21T00:50:11Z-
dc.date.available2024-06-21T00:50:11Z-
dc.date.issued2023-12-07-
dc.identifier.citationECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v. 12, NO 12, Page. 1-4en_US
dc.identifier.issn2162-8769en_US
dc.identifier.issn2162-8777en_US
dc.identifier.urihttps://iopscience.iop.org/article/10.1149/2162-8777/ad0feden_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/190892-
dc.description.abstractThis work investigates the turn-on voltage (V on) estimation methods from experimental data of InGaN-based multiple-quantum-well light-emitting diodes (LEDs) with emission spectra from near-ultraviolet to green wavelengths. Three different methods are examined: fixed current intercept, linear fitting of current-voltage curve, and the minimum ideality factor (n ideal). The voltage at minimum n ideal consistently represents the on-state of LEDs since it describes the carrier recombination processes reflected in light output power (LOP) and the external quantum efficiency (EQE). Beyond the voltage at minimum n ideal, samples' LOPs start to increase abruptly, with the EQEs reaching ˃= 54% of the peak EQE values. For V on determined by other methods, samples'LOPs are already turned on and the EQEs exceed their peak value. Therefore, using the minimum n ideal is a suitable method for determining Von of an LED.en_US
dc.description.sponsorshipThis work was supported by the Industrial Fundamental Technology Development Program (20017391, Development of light source manufacturing technology for micro LED RGB pixels of 360 ppi class stacked structure of 1 inch or more) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea), and the Korea Evaluation Institute of Industrial Technology, (20004946, Development of light source and frontplane technology for ultrahigh resolution pixels over 50 k nits).en_US
dc.languageen_USen_US
dc.publisherELECTROCHEMICAL SOC INCen_US
dc.subjectINTERNAL QUANTUM EFFICIENCYen_US
dc.titleDetermining the Turn-On Voltage of GaN-Based Light-Emitting Diodes: From Near-Ultraviolet to Green Spectraen_US
dc.typeArticleen_US
dc.relation.no12-
dc.relation.volume12-
dc.identifier.doi10.1149/2162-8777/ad0feden_US
dc.relation.page1-4-
dc.relation.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY-
dc.contributor.googleauthorIslam, Abu Bashar Mohammad Hamidul-
dc.contributor.googleauthorShin, Dong-Soo-
dc.contributor.googleauthorKwak, Joon Seop-
dc.contributor.googleauthorShim, Jong-In-
dc.relation.code2023033418-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF PHOTONICS AND NANOELECTRONICS-
dc.identifier.pidjishim-


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