Reduced leakage current in atomic-layer-deposited HfO2 thin films deposited at low temperature by in-situ defect passivation
- Title
- Reduced leakage current in atomic-layer-deposited HfO2 thin films deposited at low temperature by in-situ defect passivation
- Author
- 박태주
- Keywords
- Atomic layer deposition; HfO2 film; In-situ defect passivation; Low temperature process; Oxygen defect
- Issue Date
- 2024-02
- Publisher
- Elsevier B.V.
- Citation
- Applied Surface Science, v. 645, article no. 158790, Page. 1.0-7.0
- Abstract
- HfO2 films grown via atomic layer deposition (ALD) at low temperature generally exhibit high impurity content, reduced density, and increased oxygen defects, resulting in degraded electrical properties. To overcome this issue, this study applied an in-situ defect passivation technique at low temperature, modifying the ALD oxygen source feeding step to suit heat-sensitive substrates. The electrical properties of the ALD HfO2 film grown at 80 °C are improved when the oxygen source feeding step is repeated twice, and especially the leakage current density is significantly decreased, which is approximately 1/7 smaller at an electric field of 1 MV/cm compared to the film grown via the conventional ALD process at 80 °C. This improvement in the electrical properties can be attributed to decreased carbon impurities and oxygen defects and increased film density. A simple modification of the oxygen source feeding step during the ALD process can effectively reduce defects within the ALD HfO2 films at the atomic layer level, even when grown at low deposition temperatures. © 2023
- URI
- https://www.sciencedirect.com/science/article/pii/S0169433223024704?pes=vorhttps://repository.hanyang.ac.kr/handle/20.500.11754/187510
- ISSN
- 0169-4332;1873-5584
- DOI
- 10.1016/j.apsusc.2023.158790
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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