Highly efficient InGaN/GaN blue LEDs on large diameter Si (111) substrates comparable to those on sapphire
- Title
- Highly efficient InGaN/GaN blue LEDs on large diameter Si (111) substrates comparable to those on sapphire
- Author
- 심종인
- Keywords
- Droop; GaN on Si; Light emitting diode (LED); vertical LED
- Issue Date
- 2011-09
- Publisher
- SPIE
- Citation
- Proceedings of SPIE - The International Society for Optical Engineering, v. 8123, article no. 81230A,
- Abstract
- Highly efficient InGaN/GaN LEDs grown on 4- and 8-inch silicon substrates comparable to those on sapphire substrates have been successfully demonstrated. High crystalline quality of n-GaN templates on Si were obtained by optimizing combination of stress compensation layers and dislocation reduction layers. The full-width at half-maximum (FWHM) values of GaN (0002) and (10-12) ω-rocking curves of n-GaN templates on 4-inch Si substrates were 205 and 290 arcsec and those on 8-inch Si substrate were 220 and 320 arcsec, respectively. The dislocation densities were measured about 2~3×10 8/cm2 by atomic force microscopy (AFM) after in-situ SiH4 and NH3 treatment. Under the unencapsulated measurement condition of vertical InGaN/GaN LED grown on 4-inch Si substrate, the overall output power of the 1.4×1.4 mm2 chips representing a median performance exceeded 504 mW with the forward voltage of 3.2 V at the driving current of 350 mA. These are the best values among the reported values of blue LEDs grown on Si substrates. The measured internal quantum efficiency was 90 % at injection current of 350 mA. The efficiency droops of vertical LED chips on Si between the maximum efficiency and the efficiency measured at 1A (56.69 A/cm2) input current was 5%. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).
- URI
- https://www.spiedigitallibrary.org/conference-proceedings-of-spie/8123/1/Highly-efficient-InGaN-GaN-blue-LEDs-on-large-diameter-Si/10.1117/12.892441.shorthttps://repository.hanyang.ac.kr/handle/20.500.11754/184057
- ISSN
- 0277-786X
- DOI
- 10.1117/12.892441
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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