Effect of the p-type GaN thickness on the near-ultraviolet light-emitting diodes

Abstract

We analyzed the influence of the p-type GaN layer thickness on the 380nm band near-ultraviolet light-emitting diodes. Both electrical and optical characteristics of the LEDs were getting worse p-type GaN layer thickness increases with growth time. We suggest that the possible degradation mechanisms of characteristics are due to the increase of the non-radiative (NR) recombination rate in the active region as a result of thermal damage during p-type GaN layer growth process. © 2015 IEEE.