Electrochemical Potentiostatic Activation for the Improvement of 270 nm AlGaN-Based UV-C Light-Emitting Diodes
- Title
- Electrochemical Potentiostatic Activation for the Improvement of 270 nm AlGaN-Based UV-C Light-Emitting Diodes
- Author
- 심종인
- Keywords
- electrochemical potentiostatic activation; ultraviolet; light emitting diode; p-GaN; hole concentration; internal quantum efficiency
- Issue Date
- 2022-02
- Publisher
- Electrochemical Society, Inc.
- Citation
- ECS Journal of Solid State Science and Technology, v. 11, NO. 2, article no. 025007, Page. 1-6
- Abstract
- The electrochemical potentiostatic activation (EPA) method was performed by removing hydrogen atoms from the inside of the Mg-doped p-GaN/p-AlGaN multilayer of 270 nm AlGaN-based UV-C light-emitting diodes (UV-C LEDs). The EPA evaluation was controlled among the applied voltages of 2, 3, and 4 V for 10 min under 1.0 M HCl solution, and the hole concentration inside the p-GaN/p-AlGaN multilayer was decreased. To evaluate the characteristics and reliability of UV-C LEDs, the basic flip chip process was applied and then mounted on the AlN ceramic package by AuSn eutectic bonding. Compared to the as-fabricated LED, we demonstrated an increase of over 8% in light output power at 350 mA in UV-C LEDs by improving internal quantum efficiency (IQE) with EPA treatment at 3 V. The enhanced IQE and higher EQE contributed to improving the reliability of the LEDs, thus resulting in a similar to 7% lifetime extension.
- URI
- https://iopscience.iop.org/article/10.1149/2162-8777/ac53f8https://repository.hanyang.ac.kr/handle/20.500.11754/184009
- ISSN
- 2162-8769;2162-8777
- DOI
- 10.1149/2162-8777/ac53f8
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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