Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 심종인 | - |
dc.date.accessioned | 2023-07-20T02:09:11Z | - |
dc.date.available | 2023-07-20T02:09:11Z | - |
dc.date.issued | 2022-02 | - |
dc.identifier.citation | ECS Journal of Solid State Science and Technology, v. 11, NO. 2, article no. 025007, Page. 1-6 | - |
dc.identifier.issn | 2162-8769;2162-8777 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.1149/2162-8777/ac53f8 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/184009 | - |
dc.description.abstract | The electrochemical potentiostatic activation (EPA) method was performed by removing hydrogen atoms from the inside of the Mg-doped p-GaN/p-AlGaN multilayer of 270 nm AlGaN-based UV-C light-emitting diodes (UV-C LEDs). The EPA evaluation was controlled among the applied voltages of 2, 3, and 4 V for 10 min under 1.0 M HCl solution, and the hole concentration inside the p-GaN/p-AlGaN multilayer was decreased. To evaluate the characteristics and reliability of UV-C LEDs, the basic flip chip process was applied and then mounted on the AlN ceramic package by AuSn eutectic bonding. Compared to the as-fabricated LED, we demonstrated an increase of over 8% in light output power at 350 mA in UV-C LEDs by improving internal quantum efficiency (IQE) with EPA treatment at 3 V. The enhanced IQE and higher EQE contributed to improving the reliability of the LEDs, thus resulting in a similar to 7% lifetime extension. | - |
dc.description.sponsorship | This research was supported by LG Innotek Co, Ltd. and financially supported Chonnam National university (Grant number:2021-1446). | - |
dc.language | en | - |
dc.publisher | Electrochemical Society, Inc. | - |
dc.subject | electrochemical potentiostatic activation | - |
dc.subject | ultraviolet | - |
dc.subject | light emitting diode | - |
dc.subject | p-GaN | - |
dc.subject | hole concentration | - |
dc.subject | internal quantum efficiency | - |
dc.title | Electrochemical Potentiostatic Activation for the Improvement of 270 nm AlGaN-Based UV-C Light-Emitting Diodes | - |
dc.type | Article | - |
dc.relation.no | 2 | - |
dc.relation.volume | 11 | - |
dc.identifier.doi | 10.1149/2162-8777/ac53f8 | - |
dc.relation.page | 1-6 | - |
dc.relation.journal | ECS Journal of Solid State Science and Technology | - |
dc.contributor.googleauthor | Lee, Koh Eun | - |
dc.contributor.googleauthor | Choi, Rak Jun | - |
dc.contributor.googleauthor | Kang, Hyunwoong | - |
dc.contributor.googleauthor | Shim, Jong In | - |
dc.contributor.googleauthor | Ryu, Sang-Wan | - |
dc.contributor.googleauthor | Cho, Jaehee | - |
dc.contributor.googleauthor | Lee, June Key | - |
dc.sector.campus | E | - |
dc.sector.daehak | 과학기술융합대학 | - |
dc.sector.department | 나노광전자학과 | - |
dc.identifier.pid | jishim | - |
dc.identifier.article | 025007 | - |
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