78 0

Protection of Memories Suffering MCUs Through the Selection of the Optimal Interleaving Distance

Title
Protection of Memories Suffering MCUs Through the Selection of the Optimal Interleaving Distance
Author
백상현
Keywords
Interleaving distance; memory; multiple cell upsets (MCUs); soft error
Issue Date
2010-08
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v. 57, NO. 4, Page. 2124-2128
Abstract
Interleaving, together with single error correction codes (SEC), are common techniques to protect memories against multiple cell upsets (MCUs). This kind of errors is increasingly important as technology scales, becoming a prominent effect, and therefore greatly affecting the reliability of memories. Ideally, the interleaving distance (ID) should be chosen as the maximum expected MCU size. In this way, all errors in an MCU would occur in different logical words, thus being correctable by the SEC codes. However, the use of large interleaving distances usually results in an area increase and a more complex design of memories. In this paper, the selection of the optimal interleaving distance is explored, keeping the area overhead and complexity as low as possible, without compromising memory reliability.
URI
https://ieeexplore.ieee.org/document/5550430/https://repository.hanyang.ac.kr/handle/20.500.11754/183628
ISSN
0018-9499;1558-1578
DOI
10.1109/TNS.2010.2042818
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE