Vertically Partitioned SRAM-Based Ternary Content Addressable Memory
- Title
- Vertically Partitioned SRAM-Based Ternary Content Addressable Memory
- Author
- 백상현
- Keywords
- Memory architecture; vertical partition; TCAM; SRAM; ternary content addressable memory
- Issue Date
- 2012-12
- Publisher
- IJET
- Citation
- International Journal of Engineering and Technology, v. 4, NO. 6, Page. 760-764
- Abstract
- This paper proposes a novel memory architecture called VP SRAM-based TCAM (Vertically Partitioned Static Random Access Memory based-Ternary Content Addressable Memory) that emulates TCAM functionality with SRAM.VP SRAM-based TCAM dissects conventional TCAM table vertically (column-wise) into TCAM sub-tables, which are then processed to be stored in their corresponding SRAM blocks. During search operation, SRAM blocks are addressed in parallel by their corresponding sub-words of the input word and the read out rows of which are bit-wise ANDed that results in potential matching address(s) where a priority encoder selects the highest priority matching address. Search operation in VP SRAM-based TCAM involves two SRAM accesses followed by ANDing operation. Analysis shows that maximum possible number of vertical partitions reduces size of the proposed TCAM approximately by a factor of 1.3 than its traditional counterpart and offers optimized values for both area and latency of VP SRAM-based TCAM and hence, is a practically feasible alternative to traditional TCAMs.
- URI
- http://www.ijetch.org/show-46-365-1.htmlhttps://repository.hanyang.ac.kr/handle/20.500.11754/183618
- ISSN
- 2319-8613;0975-4024
- DOI
- 10.7763/IJET.2012.V4.479
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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