A W-Band Amplifier With a New Wide-Band Interstage Matching Technique Using Self-Resonance of a Microstrip-Coupled Line
- Title
- A W-Band Amplifier With a New Wide-Band Interstage Matching Technique Using Self-Resonance of a Microstrip-Coupled Line
- Author
- 김정현
- Keywords
- Amplifier; W-band; GaN-on-silicon; interstage matching technique; low-characteristic impedance transmission line; microstrip-coupled line
- Issue Date
- 2022-08
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE ACCESS, v. 10, Page. 93894-93900
- Abstract
- A new interstage matching technique is presented for design of a wide-band multi-stage amplifier using commercial 60 nm GaN-on-silicon technology in the W-band. The proposed interstage matching network is designed as a two-pole conjugated impedance matching approach for wideband characteristics using low-characteristic impedance transmission lines and an optimized microstrip-coupled line. In particular, the microstrip-coupled line provides strong resonance at the desired frequency, enabling optimal conjugate impedance matching of both edge and intermediate frequencies simultaneously. The implemented W-band three-stage amplifier using the proposed interstage matching technique exhibited a small-signal gain above 14.1 dB from 75 to 103 GHz. Also, the output power between 92-100 GHz was greater than 25 dBm, and the maximum output power at 96 GHz was 25.8 dBm. The W-band amplifier was designed with an area of 2 mm x 1.2 mm.
- URI
- https://ieeexplore.ieee.org/document/9870800/https://repository.hanyang.ac.kr/handle/20.500.11754/182979
- ISSN
- 2169-3536
- DOI
- 10.1109/ACCESS.2022.3203190
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
- Files in This Item:
- 96791_김정현.pdfDownload
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