Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김정현 | - |
dc.date.accessioned | 2023-07-12T01:35:48Z | - |
dc.date.available | 2023-07-12T01:35:48Z | - |
dc.date.issued | 2022-08 | - |
dc.identifier.citation | IEEE ACCESS, v. 10, Page. 93894-93900 | - |
dc.identifier.issn | 2169-3536 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/9870800/ | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/182979 | - |
dc.description.abstract | A new interstage matching technique is presented for design of a wide-band multi-stage amplifier using commercial 60 nm GaN-on-silicon technology in the W-band. The proposed interstage matching network is designed as a two-pole conjugated impedance matching approach for wideband characteristics using low-characteristic impedance transmission lines and an optimized microstrip-coupled line. In particular, the microstrip-coupled line provides strong resonance at the desired frequency, enabling optimal conjugate impedance matching of both edge and intermediate frequencies simultaneously. The implemented W-band three-stage amplifier using the proposed interstage matching technique exhibited a small-signal gain above 14.1 dB from 75 to 103 GHz. Also, the output power between 92-100 GHz was greater than 25 dBm, and the maximum output power at 96 GHz was 25.8 dBm. The W-band amplifier was designed with an area of 2 mm x 1.2 mm. | - |
dc.description.sponsorship | This work was supported by the Agency for Defense Development under Contract UC170028FD. | - |
dc.language | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | Amplifier | - |
dc.subject | W-band | - |
dc.subject | GaN-on-silicon | - |
dc.subject | interstage matching technique | - |
dc.subject | low-characteristic impedance transmission line | - |
dc.subject | microstrip-coupled line | - |
dc.title | A W-Band Amplifier With a New Wide-Band Interstage Matching Technique Using Self-Resonance of a Microstrip-Coupled Line | - |
dc.type | Article | - |
dc.relation.volume | 10 | - |
dc.identifier.doi | 10.1109/ACCESS.2022.3203190 | - |
dc.relation.page | 93894-93900 | - |
dc.relation.journal | IEEE ACCESS | - |
dc.contributor.googleauthor | Lee, Sunwoo | - |
dc.contributor.googleauthor | Kim, Wansik | - |
dc.contributor.googleauthor | Kim, Sosu | - |
dc.contributor.googleauthor | Kim, Min-Su | - |
dc.contributor.googleauthor | Kim, Junghyun | - |
dc.sector.campus | E | - |
dc.sector.daehak | 공학대학 | - |
dc.sector.department | 전자공학부 | - |
dc.identifier.pid | junhkim | - |
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