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InAs/InGaAs quantum dot Mach-Zehnder modulator at 1.55 μm
- Title
- InAs/InGaAs quantum dot Mach-Zehnder modulator at 1.55 μm
- Author
- 오재응
- Issue Date
- 2005-00
- Publisher
- IEEE
- Citation
- Conference on Lasers and Electro-Optics Europe - Technical Digest, article no. 1568112,
- Abstract
- In this paper, we have fabricated EO modulators using InAs/lnGaAs columnar QDs, and measured the modulation characteristics. The switching voltage is about 6.1 V and the modulation efficiencies of QD EO modulators are higher than those of bulk modulators at 1.55 /spl mu/m.
- URI
- https://ieeexplore.ieee.org/document/1568112https://repository.hanyang.ac.kr/handle/20.500.11754/182769
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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