A long-wavelength infrared photodetector with self-organized InAs quantum dots embedded on HEMT-like structure

Abstract

We fabricated a quantum dot infrared photodetector (QDIP) with 5-stacked self-organized InAs quantum dots embedded in a high electron mobility transistor-like modulation doped structure and utilize lateral electron transport. A peak response of the QDIP appeared at lambda = 10.5 mu m at T = 80 K. We also found that the device exhibits bias-dependent responsivity.