Formation of Silicon (Si) Grains in AlN Thin Layer Grown on an Si(111) Substrate: Effect of Deposition Sequence
- Title
- Formation of Silicon (Si) Grains in AlN Thin Layer Grown on an Si(111) Substrate: Effect of Deposition Sequence
- Author
- 오재응
- Keywords
- Transmission electron microscope; Aluminum nitride; Molecular beam epitaxy; Deposition sequence
- Issue Date
- 2015-03
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- BULLETIN OF THE KOREAN CHEMICAL SOCIETY, v. 36, NO. 3, Page. 1008-1012
- Abstract
- The dependence on the deposition sequence of microstructural properties of AlN layers grown on an Si(1 1 1) substrate was studied in detail using transmission electron microscope techniques. When aluminum (Al) was predeposited to prevent the formation of an amorphous SixNy layer at the interface, crystallized silicon (Si) grains were observed in the AlN layer. However, the AlN layer was free from the crystalline Si grains when the Si substrate was exposed to nitrogen plasma first. However, twisted crystal planes and a rough AlN/Si interface were observed in the AlN layer grown on the nitridated Si substrate.
- URI
- https://onlinelibrary.wiley.com/doi/full/10.1002/bkcs.10190https://repository.hanyang.ac.kr/handle/20.500.11754/182715
- ISSN
- 0253-2964;1229-5949
- DOI
- 10.1002/bkcs.10190
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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