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Current-voltage characteristics and deep-level study of GaN nanorod Schottky-diode-based photodetector

Title
Current-voltage characteristics and deep-level study of GaN nanorod Schottky-diode-based photodetector
Author
오재응
Keywords
GaN nanorods; Schottky diode; DLTS; photodetector
Issue Date
2021-03
Publisher
IOP PUBLISHING LTD
Citation
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v. 36, NO. 3, article no. 035010,
Abstract
Understanding the metal/semiconductor interface is very significant for real-time optoelectronic device applications. In particular, the presence of interface states and other defects is detrimental to photodetector applications. In this study, the electrical transport properties of a pristine gallium nitride (GaN) nanorod (NR)-based Schottky diode are demonstrated at different temperatures by current-voltage characteristics in the range of 200-360 K. An enhancement in the Schottky barrier height (0.65 eV for hydrogen-passivated GaN NRs compared to 0.56 eV for pristine ones) is noticed. The effect of deep traps residing within the forbidden gap of GaN NRs is investigated using deep-level transient spectroscopy. Two deep defects are found at E-C - 0.19 eV and E-C - 0.31 eV in pristine GaN NRs; the E-C - 0.31 eV defect peak is attributed to V-Ga or nitrogen interstitials. After hydrogenation the peak at E-C - 0.31 eV is suppressed and that at E-C - 0.19 eV remains unchanged. The hydrogenated GaN NRs show a high photoresponse, which is nearly 2.83 times higher than that of pristine GaN NRs. The hydrogenated GaN NRs exhibit a photoresponsivity of 4.7 xx lambda = 382 nm. The enhanced performance is attributed to the deep defect passivation by hydrogenation along with the surface-state-free interface between the GaN NRs and metal contacts. The experimental results demonstrate the significance of hydrogen treatment use in the fabrication of GaN-based optoelectronic devices.
URI
https://iopscience.iop.org/article/10.1088/1361-6641/abda62https://repository.hanyang.ac.kr/handle/20.500.11754/182687
ISSN
0268-1242;1361-6641
DOI
10.1088/1361-6641/abda62
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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