In-situ XPS study on ALD (Atomic Layer Deposition) of high-k dielectrics: La 2O 3 using La-formidinate and ozone
- Title
- In-situ XPS study on ALD (Atomic Layer Deposition) of high-k dielectrics: La 2O 3 using La-formidinate and ozone
- Author
- 박태주
- Issue Date
- 2012-00
- Publisher
- Electrochemical Society, Inc.
- Citation
- ECS Transactions, v. 45, NO. 3, Page. 95-101
- Abstract
- The detailed growth behavior of lanthanum oxide (La 2O 3) on a silicon substrate during atomic layer deposition (ALD) is investigated by in-situ, x-ray photoelectron spectroscopy (XPS) following individual ALD pulses of tris(N,N′-diisopropyl-formamidinato) lanthanum [La( iPrfAMD) 3] and highly concentrated ozone (∼390 g/m 3). At the initial growth stage, ozone oxidized the La-ligand as well as the silicon substrate. During oxidation of silicon substrate, a noticeable amount of silicon atoms diffused into growing La 2O 3 film, resulting in Si-rich and La-rich La-silicates showing composition gradient of La/Si at the deposition temperature of 250°C. The amount of La-silicate after third ALD cycle reached more than 50% of that generated by 30 cycles. As the thickness of the film increased with sequential ALD cycles, the substrate oxidation as well as the out-diffusion of Si atoms becomes a negligible quantity, and the pure La 2O 3 film starts growing leaving La-silicate layers at the interface. ©The Electrochemical Society.
- URI
- https://iopscience.iop.org/article/10.1149/1.3700876https://repository.hanyang.ac.kr/handle/20.500.11754/181549
- ISSN
- 1938-5862;1938-6737
- DOI
- 10.1149/1.3700876
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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