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Atomic Layer Deposition Process of Hf-Based High-k Gate Dielectric Film on Si Substrate
- Title
- Atomic Layer Deposition Process of Hf-Based High-k Gate Dielectric Film on Si Substrate
- Author
- 박태주
- Keywords
- Atomic layer deposition; Doping; High-k gate dielectrics; Oxygen sources; Precursors; Thermal budget
- Issue Date
- 2012-08
- Publisher
- WILEY-VCH Verlag GmbH & Co.
- Citation
- High-k Gate Dielectrics for CMOS Technology, Page. 77-110
- URI
- https://onlinelibrary.wiley.com/doi/10.1002/9783527646340.ch4https://repository.hanyang.ac.kr/handle/20.500.11754/181548
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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