Inhibitor-free area-selective atomic layer deposition of SiO2 through chemoselective adsorption of an aminodisilane precursor on oxide versus nitride substrates
- Title
- Inhibitor-free area-selective atomic layer deposition of SiO2 through chemoselective adsorption of an aminodisilane precursor on oxide versus nitride substrates
- Author
- 박태주
- Keywords
- Area-selective atomic layer deposition; Inherent substrate-dependent selectivity; Aminodisilane precursor; ALD-etching supercycle; Physisorption; Enlarged deposition selectivity
- Issue Date
- 2022-07
- Publisher
- Elsevier BV
- Citation
- Applied Surface Science, v. 589, article no. 152939, Page. 1-9
- Abstract
- Area-selective atomic layer deposition (AS-ALD) offers complementary bottom-up patterning with atomic-level accuracy on pre-defined areas in conjunction with conventional top-down patterning, so it has attracted tremendous interest for enablement of multi-dimensional nanostructures toward sub-10 nm scale technology. In this work, we report a methodology for achieving inherently selective deposition of high-quality oxide thin films through chemoselective adsorption of an aminodisilane precursor, 1,2-bis(diisopropylamino)disilane (BDIPADS), on oxide versus nitride substrates. Density functional theory (DFT) calculations show higher reactivity for adsorption of BDIPADS on OH-terminated SiO2 compared with NH2-terminated SiN surfaces, indicating selective growth of SiO2 films in the SiO2 area. Applying BDIPADS precursor to both SiO2 and SiN substrates results in inherent deposition selectivity of ~ 1 nm even without the use of inhibitory molecules such as self-assembled monolayers. Using this inherent selectivity as a starting point, we further enhance deposition selectivity using combined ALD-etching supercycle strategies in which HF-wet etching step is periodically inserted after 20 cycles of ALD SiO2, leading to an enlarged deposition selectivity of approximately 5 nm after repeated ALD-etching supercycles. This approach can be envisaged to provide a practically applicable strategy toward highly selective deposition using inherent AS-ALD that can be incorporated into upcoming 3D bottom-up nanofabrication.
- URI
- https://www.sciencedirect.com/science/article/pii/S0169433222005116?pes=vorhttps://repository.hanyang.ac.kr/handle/20.500.11754/181536
- ISSN
- 0169-4332;1873-5584
- DOI
- 10.1016/j.apsusc.2022.152939
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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