Ni-catalyzed growth of silicon wire arrays for a Schottky diode
- Title
- Ni-catalyzed growth of silicon wire arrays for a Schottky diode
- Author
- 이정호
- Keywords
- arrays; catalysis; elemental semiconductors; leakage currents; nickel; rectification; Schottky barriers; Schottky diodes; semiconductor growth; silicon
- Issue Date
- 2010-07
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, v. 97, NO. 4, article no. 042103, Page. 1-3
- Abstract
- Vertically grown Si wire arrays were fabricated on a large scale by the Ni-catalyzed vapor-liquid-solid method. A single Si wire has a length of several tens of micrometers with a pure Si stem and a NiSi2 tip. The NiSi2 tip was spontaneously formed on a Si wire due to a slight lattice mismatch relative to Si. Further, this system provides a Schottky contact having a rectifying ratio of similar to 10(2) with a low leakage current of about 2.88 x 10(-10) A. The growth mechanism of vertical Si wires and the performance of a Schottky diode are discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467839]
- URI
- https://aip.scitation.org/doi/10.1063/1.3467839https://repository.hanyang.ac.kr/handle/20.500.11754/181400
- ISSN
- 0003-6951;1077-3118
- DOI
- 10.1063/1.3467839
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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