Spalling of Thin Si Layer via Electroless and Electrodeposit-Assisted Stripping (E(2)AS) with All-Wet Process for Fabrication of Low-Cost Flexible Single-Crystalline Si Solar Cell
- Title
- Spalling of Thin Si Layer via Electroless and Electrodeposit-Assisted Stripping (E(2)AS) with All-Wet Process for Fabrication of Low-Cost Flexible Single-Crystalline Si Solar Cell
- Author
- 이정호
- Keywords
- SILICON; FILMS; ACTIVATION; DEPOSITION; EFFICIENCY; STRESS; ectrodeposition; solar cell; thin Si layer
- Issue Date
- 2018-04
- Publisher
- Electrochemical Society, Inc.
- Citation
- Journal of the Electrochemical Society, v. 165, NO. 5, Page. D243-D249
- Abstract
- A novel method using an all-wet process to reduce the cost of material in Si-based devices is described, called the electroless and electrodeposit-assisted stripping (E(2)AS) process. In this approach, a highly adhesive electroless Ni nanorod seed layer is formed on the Si substrate in place of a conventional high-cost physical vapor deposition (PVD) process. Then, a highly stressed Ni film is electrodeposited as the stress layer for lift-off of the Si thin film. Using the E2AS method, a thin Si film can be repetitively detached from a Si substrate without kerf loss, reducing the solar cell manufacturing cost. (C) 2018 The Electrochemical Society.
- URI
- https://iopscience.iop.org/article/10.1149/2.1341805jeshttps://repository.hanyang.ac.kr/handle/20.500.11754/181338
- ISSN
- 0013-4651;1945-7111
- DOI
- 10.1149/2.1341805jes
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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