112 0

Multi-stack extreme-ultraviolet pellicle with out-of-band reduction

Title
Multi-stack extreme-ultraviolet pellicle with out-of-band reduction
Author
박진구
Keywords
Contamination; EUV Pellicle; Extreme-Ultraviolet Lithography; Multi-Stack Pellicle; Out-of-Band Radiation
Issue Date
2015-05
Publisher
SPIE
Citation
Proceedings of SPIE - The International Society for Optical Engineering, v. 9422, article no. 94221O,
Abstract
The out-of-band (OoB) radiation that can cause serious aerial image deformation on the wafer is reported. In order to check the maximum allowable OoB radiation reflectivity at the extreme ultra-violet (EUV) pellicle, we simulated the effect of OoB radiation and found that the maximum allowable OoB radiation reflectivity at the pellicle should be smaller than 15 % which satisfy our criteria such as aerial image critical dimension (CD), contrast, and normalized image log slope (NILS). We suggested a new multi-stack EUV pellicle that can have high EUV transmission, minimal OoB radiation reflectivity, and enough deep ultra-violet transmission for inspection and alignment of the mask through the EUV pellicle. © 2015 SPIE.
URI
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/9422/1/Multi-stack-extreme-ultraviolet-pellicle-with-out-of-band-reduction/10.1117/12.2086052.shorthttps://repository.hanyang.ac.kr/handle/20.500.11754/181173
ISSN
0277-786X
DOI
10.1117/12.2086052
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE