Influence of Doping on Ni Electroless Deposition at Single Crystalline Si
- Title
- Influence of Doping on Ni Electroless Deposition at Single Crystalline Si
- Author
- 유봉영
- Keywords
- CONTACTS; CMOS; PHASE; AMORPHOUS-SILICON; NICKEL; STABILITY; SILICIDES; SI(100); TECHNOLOGY; AQUEOUS-SOLUTION
- Issue Date
- 2011-06
- Publisher
- Electrochemical Society, Inc.
- Citation
- Journal of the Electrochemical Society, v. 158, NO. 8, Page. D490-D494
- Abstract
- In this research, we have prepared nickel thin films by electroless deposition on a Si substrate as a fundamental study for providing nanoscale ohmic contacts between metal interconnection and the Si substrate, as well as investigated nucleation and growth behavior with different doping types and doping levels. The electroless deposition of Ni was highly affected by the surface condition of Si, which could be changed by the type of doping and doping level. When the Si substrate was doped with As, the nucleation rate was significantly increased, by which the deposition rate was less sensitive to the concentration of NH(4)F. However, when P-type doping was performed, the deposition rate increased because of a high etch rate of Si with NH(4)F, which was caused by amorphization of the Si by P-type doping. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3597157] All rights reserved.
- URI
- https://iopscience.iop.org/article/10.1149/1.3597157https://repository.hanyang.ac.kr/handle/20.500.11754/180962
- ISSN
- 0013-4651;1945-7111
- DOI
- 10.1149/1.3597157
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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