Annealing effects on electrical and optical properties of ZnO thin films synthesized by the electrochemical method
- Title
- Annealing effects on electrical and optical properties of ZnO thin films synthesized by the electrochemical method
- Author
- 유봉영
- Keywords
- ZnO thin films; Annealing process; Electrochemical techniques; Electrical properties
- Issue Date
- 2012-05
- Publisher
- Elsevier
- Citation
- Current Applied Physics, v. 12, NO. 3, Page. 784-788
- Abstract
- Microstructural and electrical properties of potentiostatically electrodeposited ZnO thin films from an aqueous bath were investigated after annealing at different temperatures in Ar and 5% H-2/Ar atmospheres. It is confirmed that the bandgap energy of ZnO thin films decreased with annealing from 3.42 to 3.27-3.29 eV by calculating the wavelength of the absorption region. The annealing at temperatures as low as 200 degrees C decreased the sheet resistance of ZnO thin films because of the extinction of Zn(OH)(2) in the atmosphere. In addition, the sheet resistance of ZnO thin films decreased by annealing in a 5% H-2 atmosphere, which caused an increase of carrier concentration by hydrogen reduction. (C) 2011 Elsevier B.V. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S1567173911005803?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/180957
- ISSN
- 1567-1739;1878-1675
- DOI
- 10.1016/j.cap.2011.11.007
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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